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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION *With TO-220F package *Complement to type 2SD1913 *High reliability. *High breakdown voltage *Low saturation voltage. *Wide area of safe operation APPLICATIONS *60V/3A low-frequency power amplifier *General power amplifier applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -6 -3 -8 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IE=0 IC=-5mA; RBE=? IE=-1mA; IC=0 IC=-2A ; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-40V;IE=0 VEB=-4V;IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 70 20 MIN -60 -60 -6 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SB1274 TYP. MAX UNIT V V V -0.4 -0.8 -1.0 -1.0 -0.1 -0.1 280 V V mA mA 100 60 MHz pF hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1274 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 4 |
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